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SEMICONDUCTOR LAYER SEQUENCE, OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A SEMICONDUCTOR LAYER SEQUENCE

机译:半导体层序列,光电半导体芯片和生产半导体层序列的方法

摘要

In at least one embodiment, the semiconductor layer sequence (1) is provided for an optoelectronic semiconductor chip (10). The semiconductor layer sequence (1) comprises at least three quantum wells (2) designed for generating an electromagnetic radiation. Furthermore, the semiconductor layer sequence (1) comprises a plurality of barrier layers (3), at least one of which is respectively arranged between two adjacent quantum wells (2). The quantum wells (2) have a first average indium content and the barrier layers (3) have a second, lower average indium content. In this case, a second average lattice constant of the barrier layers (3) is less than a first average lattice constant of the quantum wells (2).
机译:在至少一个实施例中,半导体层序列(1)被提供用于光电子半导体芯片(10)。半导体层序列(1)包括至少三个设计用于产生电磁辐射的量子阱(2)。此外,半导体层序列(1)包括多个势垒层(3),其中至少一个分别布置在两个相邻的量子阱(2)之间。量子阱(2)具有第一平均铟含量,并且势垒层(3)具有第二较低的平均铟含量。在这种情况下,势垒层(3)的第二平均晶格常数小于量子阱(2)的第一平均晶格常数。

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