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Semiconductor layer sequence, an optoelectronic semiconductor chip and a process for the preparation of a semiconductor layer sequence

机译:半导体层序列,光电子半导体芯片和半导体层序列的制备方法

摘要

In at least one embodiment, the semiconductor layer sequence (1) for an optoelectronic semiconductor chip (10) is provided. The semiconductor layer sequence (1) contains at least three quantum wells (2), which, in order to create an electromagnetic radiation are set up. Furthermore, the semiconductor layer sequence (1) a plurality of barrier layers (3), of which in each case at least one between two adjacent quantum wells (2) is arranged. The quantum wells (2) have a first middle indium content and the barrier layers (3) a second, smaller average indium content on. A second average grating constant of the barrier layers (3) is smaller than a first average grating constant of the quantum wells (2).
机译:在至少一个实施例中,提供了用于光电子半导体芯片(10)的半导体层序列(1)。半导体层序列(1)包含至少三个量子阱(2),其被建立以产生电磁辐射。此外,半导体层序列(1)具有多个势垒层(3),在每个势垒层之间分别在两个相邻的量子阱(2)之间布置至少一个。量子阱(2)具有第一中间铟含量,并且势垒层(3)具有第二较小的平均铟含量。势垒层(3)的第二平均光栅常数小于量子阱(2)的第一平均光栅常数。

著录项

  • 公开/公告号DE102011115312A1

    专利类型

  • 公开/公告日2013-04-04

    原文格式PDF

  • 申请/专利权人 OSRAM OPTO SEMICONDUCTORS GMBH;

    申请/专利号DE201110115312

  • 发明设计人 MARTIN RUDOLF BEHRINGER;IVAR TÅNGRING;

    申请日2011-09-29

  • 分类号H01L33/06;H01L33/08;H01L33/30;H01L31/0248;H01S5/343;

  • 国家 DE

  • 入库时间 2022-08-21 16:22:08

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