Method of fabricating light emitting diode using laser lift-off technique and laser lift-off apparatus having heater

摘要

Disclosed is a method of fabricating a light emitting diode using a laser lift-off technique. The method includes growing epitaxial layers, which include a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer, on a first substrate, bonding a second substrate having a different coefficient of thermal expansion from that of the first substrate to the epitaxial layers at a first temperature of the first substrate higher than room temperature, and separating the first substrate from the epitaxial layers by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than room temperature but not more than the first temperature. Thus, during a laser lift-off process, focusing of the laser beam can be easily achieved and the epitaxial layers are prevented from suffering cracking or fracture. A laser lift-off apparatus including a heater is also disclosed.