Diode Lasers and Light Emitting Diodes Operating at Room Temperature with Wavelengths Above 3 Micrometers.

摘要

New family of the GaSb-based type-I quantum well (QW) diode lasers and light emitting diodes (LED) were designed and fabricated. World record parameters were demonstrated for all devices. Diode laser operate in continuous wave (CW) regime at room temperature (RT) up to 3.4 lm. More than 350 mW ofCW power was demonstrated for 3 J.lm emitting multimode lasers. Single spatial mode 3-3.2 J.lm diode lasers were developed. LEDs operate at wavelength above 4 J.lm at RT. Dual color mid-infrared LEDs were designed and fabricated. Metamorphic diode lasers grown onto GaSb substrates using compositionally graded buffers were designed and fabricated.