METHOD FOR MANUFACTURING A SEMICONDUCTOR MICRO- OR NANOWIRE, SEMICONDUCTOR STRUCTURE COMPRISING SUCH A MICRO- OR NANOWIRE, AND METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE

摘要

The invention relates to a method for manufacturing at least one semiconductor micro- or nanowire for forming an optoelectronic structure (10). The method comprises the steps of providing a semiconductor substrate (100), and forming a crystalline so-called buffer layer (110) on the substrate (100), the buffer layer (110) having, on at least a portion of the thickness thereof, a first area (110) mainly consisting of magnesium nitride in the form of Mg_xN_y. The method further comprises the step of forming at least one semiconductor micro- or nanowire (150) on the buffer layer (110). The invention also relates to optoelectronic structures (10) comprising micro- or nanowires (150), and to the method for manufacturing such structures (10).