首页> 外国专利> Method for manufacturing a semiconductor micro- or nano-wire, semiconductor structure comprising such a micro- or nano-wire, and method for manufacturing a semiconductor structure

Method for manufacturing a semiconductor micro- or nano-wire, semiconductor structure comprising such a micro- or nano-wire, and method for manufacturing a semiconductor structure

机译:用于制造半导体微线或纳米线的方法,包括这种微线或纳米线的半导体结构以及用于制造半导体结构的方法

摘要

A method of manufacturing at least one semiconducting micro- or nano-wire used for formation of an optoelectric structure, optoelectronic structures including the micro- or nano-wires, and a method enabling manufacture of the photoelectronic structures. The method includes providing a semiconducting substrate, forming a crystalline buffer layer on the substrate, the buffer layer having a first zone over at least part of its thickness composed mainly of magnesium nitride in a form MgxNy, and forming at least one semiconducting micro- or nano-wire on the buffer layer.
机译:一种制造用于形成光电结构的至少一条半导体微或纳米线的方法,包括该微或纳米线的光电结构,以及一种能够制造光电结构的方法。该方法包括提供半导体衬底,在衬底上形成结晶缓冲层,该缓冲层在其厚度的至少一部分上具有第一区域,该第一区域主要由形式为Mg x N <的氮化镁组成。 Sub> y ,并在缓冲层上形成至少一根半导体微或纳米线。

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