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Method for manufacturing a semiconductor micro- or nano-wire, semiconductor structure comprising such a micro- or nano-wire, and method for manufacturing a semiconductor structure
Method for manufacturing a semiconductor micro- or nano-wire, semiconductor structure comprising such a micro- or nano-wire, and method for manufacturing a semiconductor structure
A method of manufacturing at least one semiconducting micro- or nano-wire used for formation of an optoelectric structure, optoelectronic structures including the micro- or nano-wires, and a method enabling manufacture of the photoelectronic structures. The method includes providing a semiconducting substrate, forming a crystalline buffer layer on the substrate, the buffer layer having a first zone over at least part of its thickness composed mainly of magnesium nitride in a form MgxNy, and forming at least one semiconducting micro- or nano-wire on the buffer layer.
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机译:一种制造用于形成光电结构的至少一条半导体微或纳米线的方法,包括该微或纳米线的光电结构,以及一种能够制造光电结构的方法。该方法包括提供半导体衬底,在衬底上形成结晶缓冲层,该缓冲层在其厚度的至少一部分上具有第一区域,该第一区域主要由形式为Mg x Sub> N <的氮化镁组成。 Sub> y Sub>,并在缓冲层上形成至少一根半导体微或纳米线。
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