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GROWTH AND LUMINESCENCE OF ELONGATED MICRO- AND NANOSTRUCTURES OF OXIDE SEMICONDUCTORS

机译:氧化物半导体的微结构和纳米结构的生长和发光

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摘要

Sintering of SnO_2, ZnO and Ga_2O_3 powders under argon flow leads to the formation of different elongated micro and nanostructures on the sample surface. Nanowires have been grown on the three materials investigated, while in the case of SnO_2. tubes were also obtained. The samples have been characterized by scanning electron microscopy (SEM) and by cathodoluminescence in the SEM. The nanostructures show different luminescence properties than the sample background. The luminescence properties of the elongated structures are discussed.
机译:SnO_2,ZnO和Ga_2O_3粉末在氩气流下的烧结导致在样品表面形成不同的细长的微结构和纳米结构。在研究的三种材料上生长了纳米线,而在SnO_2的情况下。还获得了试管。样品已通过扫描电子显微镜(SEM)和SEM中的阴极发光进行了表征。纳米结构显示出与样品背景不同的发光特性。讨论了细长结构的发光特性。

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