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Device for measuring the parameters of sensors based on micro- and nanostructured semiconductor oxides

机译:基于微米和纳米结构的半导体氧化物的传感器参数测量装置

摘要

The invention relates to the field of measuring equipment and can be used in measuring devices that use nanosensors based on nanostructured semiconductor oxides.The device for measuring the parameters of sensors based on micro- and nanostructured semiconductor oxides comprises a reference voltage source (Uref), which voltage is applied to the input of one of the analog-to-digital converters (ADC) of a microcontroller (MCU) via an operational amplifier, and which is connected in series to the investigated nanostructure (Rx) and an additional resistor (R0), and the voltage drop across the resistor (R0) is applied to the input of a second analog-to-digital converter (ADC) of the microcontroller (MCU) via the second operational amplifier. The output of the microcontroller (MCU) is connected to a screen for displaying the results obtained.
机译:本发明涉及测量设备领域,可用于使用基于纳米结构的半导体氧化物的纳米传感器的测量设备中。基于微结构和纳米结构的半导体氧化物的传感器参数的测量设备包括参考电压源(Uref),哪个电压通过运算放大器施加到微控制器(MCU)的一个模数转换器(ADC)的输入上,并与研究的纳米结构(Rx)和一个附加电阻(R0)串联连接),电阻(R0)两端的压降通过第二运算放大器施加到微控制器(MCU)的第二个模数转换器(ADC)的输入上。微控制器(MCU)的输出连接到用于显示获得的结果的屏幕。

著录项

  • 公开/公告号MD1023Z

    专利类型

  • 公开/公告日2016-11-30

    原文格式PDF

  • 申请/专利权人 UNIVERSITATEA TEHNICĂ A MOLDOVEI;

    申请/专利号MDS20150147

  • 发明设计人 LUPAN OLEG;VERJBIŢKI VALERI;

    申请日2015-11-09

  • 分类号B82Y35/00;G01D5/12;G01R31/02;G01R31/26;G01R31/27;

  • 国家 MD

  • 入库时间 2022-08-21 13:37:50

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