首页>
外国专利>
SPIN TORQUE TRANSFER MAGNETIC TUNNEL JUNCTION FABRICATED WITH A COMPOSITE TUNNELING BARRIER LAYER
SPIN TORQUE TRANSFER MAGNETIC TUNNEL JUNCTION FABRICATED WITH A COMPOSITE TUNNELING BARRIER LAYER
展开▼
机译:带有复合隧道屏障层的自旋扭矩传递磁性隧道结
展开▼
页面导航
摘要
著录项
相似文献
摘要
A STT-RAM MTJ is disclosed with a composite tunnel barrier comprised of a CoMgO layer that contacts a pinned layer and a MgO layer which contacts a free layer. A CoMg layer with a Co content between 20 and 40 atomic% is deposited on the pinned layer and is then oxidized to produce Co nanoconstrictions within a MgO insulator matrix. The nanoconstrictions control electromigration of Co into an adjoining MgO layer. The free layer may comprise a nanocurrent channel (NCC) layer such as FeSiO or a moment dilution layer such as Ta between two ferromagnetic layers. Furthermore, a second CoMgO layer or a CoMgO/MgO composite may serve as a perpendicular Hk enhancing layer formed between the free layer and a cap layer. One or both of the pinned layer and free layer may exhibit in-plane anisotropy or perpendicular magnetic anisotropy.
展开▼