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TEMPERATURE GRADIENT CONTROL DEVICE FOR CRYSTAL GROWTH AND METHOD THEREOF

机译:晶体生长的温度梯度控制装置及其方法

摘要

A temperature gradient control device for crystal growth and a method thereof, relating to an auxiliary temperature control device of crystal material growth equipment. The temperature gradient control device comprises a furnace chamber (1), a heating element (3), a crucible (5), a sleeve (4), and a coolant cooling mechanism. The crucible in the furnace chamber (1) is disposed in the middle of the sleeve to form an independent space in the sleeve (4) for the lower part of the crucible; the coolant cooling mechanism is disposed in a sleeve space at the lower part of the crucible, and the coolant cooling mechanism cools the lower part of the crucible, so as to form a low-temperature area at the lower part of the crucible. In the present invention, an upper cover is added between the outer part of the crucible and the sleeve or at the upper part of the crucible; by means of the sleeve in combination with the coolant cooling mechanism, the heat gained from the heating element by the upper part of the crucible is higher than heat gained by the lower part of the crucible or the upper cover, so that the heat energy of the heating element is gathered towards the upper part of the crystal material in the crucible; therefore, the temperature of the crystal material at the upper part rises more rapidly, thus implementing the temperature control or temperature guide, and implementing the temperature gradient control for crystal growth.
机译:用于晶体生长的温度梯度控制装置及其方法,涉及晶体材料生长设备的辅助温度控制装置。该温度梯度控制装置包括炉腔(1),加热元件(3),坩埚(5),套筒(4)和冷却剂冷却机构。炉腔(1)中的坩埚位于套管的中间,在套管(4)中为坩埚的下部形成一个独立的空间。冷却剂冷却机构设置在坩埚下部的套筒空间中,冷却剂冷却机构冷却坩埚的下部,从而在坩埚的下部形成低温区域。在本发明中,在坩埚的外部和套筒之间或在坩埚的上部添加上盖。通过套筒和冷却液冷却机构的组合,坩埚上部从加热元件获得的热量高于坩埚下部或上部盖罩获得的热量,因此,加热元件聚集在坩埚中晶体材料的上部。因此,上部的晶体材料的温度上升更快,从而实现温度控制或温度引导,并且实现晶体生长的温度梯度控制。

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