Growth of semi-insulating GaAs crystals in low temperature gradients by using the vapour pressure controlled czochralski method (VCz)

摘要

Te present paper gives a review on fundamentals, modelling growth, structural and electrical proper- ties of semi-insulating GaAs single crystals, grown in low temperature gradients by the Vapour Pressure Controlled Czochralski Method (VCz), with diameters from 75 up to 150 up to 150 mm. Special attention is drawn to The investigation of the temperature-fields inside the growing crystals (and thus thermoelastic stress). Addi- Tionally, the influence of convective transport of heat within melt and inert gas is investigated by both ex- Periment and modelling. Thermodynamic aspects of arsenic pressure control within the inner VCz chamber As well as the special experimental and technological challenges are discussed.