Global temperature field simulation of the vapour pressure controllekd Czochralski (VCZ) growth of 3'-4' gallium arsenide crystals

摘要

The vapour pressure controlled Czochralski (VCZ) method belongs to the new methods to provdie low-gradient temperature fields during the grwoth of III-V crystals. For the first time a global two-dimensianl model of the VCZ growth of 3" and 4" GaAs crystals is presented. The finite volume code Crys VUN＋＋ was used to simulate heat transfer taking into account conducltion and radiaiton in the whole equipment. Thermoelastic stresses are analysed in terms of the von-Mises stress. These is a good agreement between measured and calculated vlaues, e.g., of the convexity of the crystal-melt interface.