METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE CAPABLE OF PREVENTING DEGRADATION OF A DEVIATION OF A THRESHOLD VOLTAGE AND RELIABILITY OF A TRANSISTOR

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce interface state density of an oxide semiconductor film and an underlying insulation film by forming the underlying insulation film emitting oxygen with heat processing.;CONSTITUTION: An underlying insulating film(102) is formed on a substrate(100). A protective insulation film(104) is formed near an underlying insulation film. An oxide semiconductor film(106) has a high resistance region(106a) and a low resistance region(106b). A gate insulating film(108) is formed on the oxide semiconductor film. A side wall insulating film(112) is formed while contacting a lateral side of a gate electrode(110). A pair of electrodes(114) is formed while contacting the oxide semiconductor film.;COPYRIGHT KIPO 2013