首页> 外国专利> VANADIUM DIOXIDE WITH A SINGLE METAL-INSULATOR TRANSITION PHASE BOUNDARY CAPABLE OF BEING USED FOR DEVICES OF VARIOUS APPLICATIONS

VANADIUM DIOXIDE WITH A SINGLE METAL-INSULATOR TRANSITION PHASE BOUNDARY CAPABLE OF BEING USED FOR DEVICES OF VARIOUS APPLICATIONS

机译:二氧化钒具有单一金属-绝缘体转变相边界的能力,可用于各种应用

摘要

PURPOSE: A vanadium dioxide with a single metal-insulator transition phase boundary is provided to adjust a relative ratio of an insulator domain and a metal domain.;CONSTITUTION: A vanadium dioxide has a single metal-insulator transition phase boundary. When the vanadium is in metal state, the electric resistance is increased according to temperature increase. A transition of the vanadium dioxide to a metal-insulator is provoked by an electric field. The vanadium dioxide is manufactured in one or more forms selected from a monocrystal form, a polycrystal form, a thin film form, and a nanoform. The vanadium dioxide is manufactured by using vacuum-self-flux evaporation. The vanadium dioxide includes impurities. The impurities are one or more selected from a group consisting of chrome (Cr), tungsten (W), aluminum (Al), iron (Fe), molybdenum (Mo), niobium (Nb), tantalum (Ta), antimony (Sb) and copper (Cu).;COPYRIGHT KIPO 2013
机译:目的:提供具有单个金属-绝缘体过渡相边界的二氧化钒,以调节绝缘子畴和金属畴的相对比。;组成:二氧化钒具有单个金属-绝缘体过渡相边界。当钒处于金属状态时,电阻随温度升高而升高。电场促使二氧化钒过渡到金属绝缘体。二氧化钒以选自单晶形式,多晶形式,薄膜形式和纳米形式的一种或多种形式制造。二氧化钒是利用真空自磁通蒸发法制造的。二氧化钒包含杂质。杂质是选自铬(Cr),钨(W),铝(Al),铁(Fe),钼(Mo),铌(Nb),钽(Ta),锑(Sb)中的一种或多种。 )和铜(Cu)。; COPYRIGHT KIPO 2013

著录项

  • 公开/公告号KR20120133940A

    专利类型

  • 公开/公告日2012-12-11

    原文格式PDF

  • 申请/专利权人 ADVANCED NANO PRODUCTS CO. LTD.;JU HONG LYOUL;

    申请/专利号KR20110052879

  • 发明设计人 JU HONG LYOUL;

    申请日2011-06-01

  • 分类号C01G31/02;H01B3/10;H01B1/08;C30B29/16;

  • 国家 KR

  • 入库时间 2022-08-21 16:28:29

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