METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE MANUFACTURED BY THE SAME CAPABLE OF PROCESSING POLYSILICON MATERIALS WITH A SILICIDE PROCESS

摘要

PURPOSE: A method for manufacturing a semiconductor device and the semiconductor device manufactured by the same are provided to prevent a polysilicon resister from being damaged by protecting the polysilicon register in a replacement metal gate process.;CONSTITUTION: A gate oxide layer(150) is deposited on a substrate. A first polysilicon layer(152) is formed on the gate oxide layer. A photoresist layer is formed on the substrate including the gate oxide layer and a first polysilicon layer. A recess region(113) is formed in a third STI region by etching the exposed region of the first polysilicon layer and the gate oxide layer. A second polysilicon layer(152a) is formed on the substrate including the first polysilicon layer. A part(152b) of the second polysilicon layer is formed in the recess region.;COPYRIGHT KIPO 2013