首页> 外国专利> METHOD FOR MANUFACTURING A NANOWIRE WHICH IS ABLE TO ADJUST THE WIDTH AND HEIGHT OF THE NANOWIRE BY CONTROLLING TIME FOR A WET-ETCHING PROCESS

METHOD FOR MANUFACTURING A NANOWIRE WHICH IS ABLE TO ADJUST THE WIDTH AND HEIGHT OF THE NANOWIRE BY CONTROLLING TIME FOR A WET-ETCHING PROCESS

机译:制造可以通过控制湿蚀刻过程的时间来调节纳米线的宽度和高度的纳米线的方法

摘要

PURPOSE: A method for manufacturing a nanowire is provided to produce a large amount of high uniformity nanowire through a wet-etching process.;CONSTITUTION: A method for manufacturing a nanowire comprises: a step of forming a plurality of lattice patterns(131) on a substrate(110); a step of forming a sacrificial layer(140) on the lattice patterns; a step of forming a nanowire(170) on the lattice patterns with the sacrificial layer; and a step of etching the sacrificial layer and separating the lattice pattern and the nanowire.;COPYRIGHT KIPO 2013
机译:目的:提供一种制造纳米线的方法,以通过湿法刻蚀工艺生产大量高均匀度的纳米线;组成:一种制造纳米线的方法包括:在其上形成多个晶格图案的步骤(131)基板(110);在晶格图案上形成牺牲层(140)的步骤;在具有牺牲层的晶格图案上形成纳米线(170)的步骤;以及蚀刻牺牲层并分离晶格图案和纳米线的步骤。; COPYRIGHT KIPO 2013

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