HIGH EFFICIENCY SEMICONDUCTOR PHOTO DEVICE STRUCTURE HAVING ELECTRON TUNNELING BARRIER LAYER AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A high efficiency semiconductor photo device structure having an electron tunneling barrier layer and a manufacturing method thereof are provided to improve optical extraction efficiency by inserting an electron tunneling barrier between a N-type GaN layer and a multi quantum well. CONSTITUTION: An electron tunneling barrier layer(232) is formed on an N-type nitride semiconductor layer(AlxInyGa1-x-yNs (0x1, 0y1, 0x+y1)). A multiple quantum well(233) is formed on the ETB layer as an active layer. A P-type nitride semiconductor layer(235) is formed on the multiple quantum well. The electron tunneling barrier layer improves the recombination of holes which are injected from a P-type nitride semiconductor layer into the multiple quantum well. [Reference numerals] (210) Substrate; (220) Template layer; (230) LED layer; (234) Removable