RESIST COMPOSITION CAPABLE OF FORMING A LOW RESIST PATTERN WITH A SMALL LINE WIDTH ROUGHNESS AND MINIMIZING THE GENERATION OF DEFECTS AND A RESIST PATTERNING METHOD

摘要

PURPOSE: A resist composition and a resist patterning method are provided to obtain good developing contrast in a solvent-developing process not only in an alkali-developing process but in a solvent-developing process.;CONSTITUTION: A resist composition for EUV or EB comprises a first resin component and a second resin component. The first resin component has at least one selected from a fluorine atom and silicon atom, an aromatic group, and a polarity-changing group which is decomposed by base and increases the polarity thereof. The second resin component generates acid by exposure and changes solubility to a developing liquid by the acid. The ratio of an aromatic group-containing structure unit of the first resin component is 20 mol% or more.;COPYRIGHT KIPO 2013