WAFER AND A METHOD FOR FABRICATION THE WAFER CAPABLE OF ACCURATELY CONTROLLING GROWTH SPEED BY ADJUSTING PROCESS PRESSURE

摘要

PURPOSE: A wafer and a method for fabrication the wafer are provided to improve the performance of an epi layer by relieving the stress of the epi layer.;CONSTITUTION: A step for growing an epi layer is processed under growth pressure(PG). The step for growing the epi layer includes a step of growing a buffer layer for controlling defects existing in a wafer surface. The buffer layer for controlling defects is processed at the beginning of the step for growing the epi layer. The step for growing the epi layer includes a step(s1) for maintaining a first pressure(P1) and a step(s2) for maintaining a second pressure(P2). The first pressure is 3 to 10 % higher than the growth pressure.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) Pressure; (BB) Time