DICING/DIE BONDING INTEGRAL FILM, DICING/DIE BONDING INTEGRAL FILM MANUFACTURING METHOD, AND SEMICONDUCTOR CHIP MANUFACTURING METHOD

摘要

A dicing/die bonding integral film of the present invention includes a base film, a pressure-sensitive adhesive layer which is formed on the base film and to which a wafer ring for blade dicing is bonded, and a bonding layer formed on the adhesive layer and having a central portion to which a semiconductor wafer to be diced is bonded, wherein a planar shape of the bonding layer is circular, an area of the bonding layer is greater than an area of the semiconductor wafer and smaller than an area of each of the base film and the adhesive layer, and a diameter of the bonding layer is greater than a diameter of the semiconductor wafer and less than an inner diameter of the wafer ring, and a difference in diameter between the bonding layer and the semiconductor wafer is greater than 20 mm and less than 35 mm.