DICING/DIE BONDING INTEGRAL FILM, DICING/DIE BONDING INTEGRAL FILM MANUFACTURING METHOD, AND SEMICONDUCTOR CHIP MANUFACTURING METHOD

摘要

An object of the present invention is to suppress the peeling of the peripheral edge portion of the adhesive layer from the pressure-sensitive adhesive layer in the dicing step of the semiconductor wafer. The dicing die-bonding integrated film of the present invention comprises a base film, a pressure-sensitive adhesive layer formed on the base film and to which a wafer ring used for dicing the blade is pasted, a pressure- Wherein the area of the adhesive layer is larger than the area of the semiconductor wafer and smaller than the area of each of the base film and the pressure-sensitive adhesive layer The diameter of the adhesive layer is larger than the diameter of the semiconductor wafer and smaller than the inner diameter of the wafer ring. The difference between the diameter of the adhesive layer and the diameter of the semiconductor wafer is larger than 20 mm and smaller than 35 mm.