首页> 外国专利> ULTRATHIN NANOWIRE-BASED AND NANOSCALE HETEROSTRUCTURE-BASED THERMOELECTRIC CONVERSION STRUCTURES AND METHOD OF MAKING SAME

ULTRATHIN NANOWIRE-BASED AND NANOSCALE HETEROSTRUCTURE-BASED THERMOELECTRIC CONVERSION STRUCTURES AND METHOD OF MAKING SAME

机译:基于超薄纳米线和基于纳米尺度异质结构的热电转换结构及其制造方法

摘要

An ultrathin tellurium nanowire structure is disclosed, including a rod-like crystalline structure of tellurium, wherein the crystalline structure is defined by diameters of between 5-6 nm. In addition, an ultrathin tellurium-based nanowire structure is disclosed including a rod-like crystalline structure of one of lead telluride and bismuth telluride, wherein an ultrathin tellurium nanowire structure is used as a precursor to generate the rod-like crystalline structure. Furthermore, a nanoscale heterostructure tellurium-based nanowire structure is disclosed including a dumbbell-like crystalline heterostructure having a center rod-like portion and one octahedral structure connected to each end of each of the center rod- like portions, wherein the center rod-like portion is a tellurium-based nanowire structure and the octahedral structures are one of lead telluride, cadmium telluride, and bismuth telluride.
机译:公开了一种超薄碲纳米线结构,包括碲的棒状晶体结构,其中该晶体结构由5-6nm之间的直径限定。另外,公开了包括碲化铅和碲化铋之一的棒状晶体结构的基于超碲的纳米线结构,其中将超薄碲纳米线结构用作产生棒状晶体结构的前体。此外,公开了一种基于纳米级异质结构的基于碲的纳米线结构,其包括具有中心杆状部分和连接到每个中心杆状部分的每个末端的一个八面体结构的哑铃状晶体异质结构。一部分是碲基纳米线结构,八面体结构是碲化铅,碲化镉和碲化铋之一。

著录项

  • 公开/公告号KR20130057436A

    专利类型

  • 公开/公告日2013-05-31

    原文格式PDF

  • 申请/专利权人 PURDUE RESEARCH FOUNDATION;

    申请/专利号KR20127030451

  • 发明设计人 WU YUE;ZHANG GENQIANG;

    申请日2011-04-25

  • 分类号C01B19/02;B82B1/00;B82B3/00;

  • 国家 KR

  • 入库时间 2022-08-21 16:27:00

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