首页> 外国专利> ATTACHMENT MATERIAL FOR SEMICONDUCTOR CHIP BONDING, ATTACHMENT FILM FOR SEMICONDUCTOR CHIP BONDING, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE

ATTACHMENT MATERIAL FOR SEMICONDUCTOR CHIP BONDING, ATTACHMENT FILM FOR SEMICONDUCTOR CHIP BONDING, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE

机译:半导体芯片键合的连接材料,半导体芯片键合的连接膜,半导体器件的制造方法以及半导体器件

摘要

Disclosed is an attachment material for semiconductor chip bonding, whereby manufacturing a highly reliable semiconductor device, controlling such that a fillet shape does not take on a convex shape, is possible. The disclosed attachment material for semiconductor chip bonding has a shear modulus (Gr) as measured with a viscoelasticity measurement device that is greater than or equal to 1*106 Pa at 25 degrees C; a minimum complex viscosity (?*min) up to the melting point of solder as measured by a rheometer that is less than or equal to 5x101 Pa°s; and the complex viscosity (?*(1Hz)) when measured at 140 degrees C, 1 rad distortion, and a frequency of 1Hz is 0.5-4.5 times the complex viscosity (?*(10Hz)) when measured at 140 degrees C, 1 rad distortion, and a frequency of 10Hz.
机译:公开了用于半导体芯片键合的附接材料,由此可以制造高度可靠的半导体器件,该半导体器件进行控制以使圆角形状不呈现凸形。所公开的用于半导体芯片键合的附接材料具有在25℃下通过粘弹性测量装置测量的剪切模量(Gr),该剪切模量大于或等于1×106Pa。由流变仪测得的最高熔点到焊料熔点的最小复数粘度(η* min)小于或等于5x101 Pa°s;在140℃下测量时的复数粘度(η*(1Hz))为1 rad畸变,在140℃下测量时1Hz的频率为复数粘度(η*(10Hz))的0.5-4.5倍。 rad失真,频率为10Hz。

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