首页> 外国专利> MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING FLIP CHIP BONDING, SEMICONDUCTOR DEVICE, AND FORMING METHOD OF FLIP CHIP BONDING PART OF SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING FLIP CHIP BONDING, SEMICONDUCTOR DEVICE, AND FORMING METHOD OF FLIP CHIP BONDING PART OF SEMICONDUCTOR DEVICE

机译:使用倒装芯片键合的半导体装置的制造方法,半导体装置以及半导体装置的倒装片键合部的形成方法

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which enhances the durability and the quality of the semiconductor device to be manufactured and uses flip flop bonding.;SOLUTION: This method comprises a bump bonding step of bonding a bump 12 on a substrate 15 formed with a first electrode thin film 14, a flip-flop bonding step of bonding a semiconductor chip 11 to the substrate 15 via the bump 12, and a heat treating step of at least heating or cooling after the flip-flop bonding step. In the method for manufacturing a semiconductor device, the flip flop bonding is used which spreads a material for forming the bump 12 in order to finally terminate the spread of the material for forming the bump 12 in the heat treating step only in the first electrode thin film 14 in the flip-flop bonding step until a first condition that a depth d2 which spreads the material for forming the bump 12 is smaller than the thickness T of the first electrode thin film 14.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种用于制造半导体器件的方法,该方法可提高待制造的半导体器件的耐用性和质量,并使用触发器键合。解决方案:该方法包括将凸点12接合在其上的凸点接合步骤。形成有第一电极薄膜14的基板15,经由凸点12将半导体芯片11接合至基板15的触发器接合步骤,以及在触发器接合之后至少加热或冷却的热处理步骤步。在用于制造半导体器件的方法中,使用触发器键合来扩散形成凸块12的材料,以便最终仅在第一电极薄的情况下终止在热处理步骤中形成凸块12的材料的扩展。膜在触发器接合步骤中直到第一条件,即使形成凸点12的材料扩散的深度d2小于第一电极薄膜14的厚度T。COPYRIGHT:(C)2006,JPO&NCIPI

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号