SILICON CARBIDE SINGLE CRYSTAL GROWING DEVICE CAPABLE OF GROWING A HIGH QUALITY SINGLE CRYSTAL

摘要

PURPOSE: A silicon carbide single crystal growing device is provided to prevent carbon from being excessively supplied to a graphite crucible by using the graphite crucible coated with SiC.;CONSTITUTION: A crucible(510) accommodates single crystal raw materials(350). A seed holder(100) fixes a seed(200) by being attached to the inner wall of the crucible. An insulating material(520) surrounds the crucible. A quartz pipe(530) surrounds the insulating material. A heating unit(540) is arranged on the outside of the quartz pipe to heat the crucible. A coating layer(600) is formed to surround the inner wall of the crucible.;COPYRIGHT KIPO 2013