Producing a silicon carbide volume single crystal, comprises producing silicon carbide growth gas phase in crystal growing area of culture crucible and growing-off the silicon carbide volume single crystal from the gas phase by deposition

摘要

The method for producing a silicon carbide volume single crystal (2) with a specific resistance of 10 1 1 omega cm and a diameter of 7.62 cm, comprises producing a silicon carbide growth gas phase (7) in a crystal growing area (5) of a culture crucible (3) and growing-off the silicon carbide volume single crystal from the gas phase by deposition, storing the silicon carbide growth gas phase made of a silicon carbide source material (6), which is present in a silicon carbide supply area inside the culture crucible, and gaseously supplying a dopant from a dopant supply to the crystal growing area. The method for producing a silicon carbide volume single crystal (2) with a specific resistance of 10 1 1 omega cm and a diameter of 7.62 cm, comprises producing a silicon carbide growth gas phase (7) in a crystal growing area (5) of a culture crucible (3) and growing-off the silicon carbide volume single crystal from the silicon carbide growth gas phase by deposition, storing the silicon carbide growth gas phase made of a silicon carbide source material (6), which is present in a silicon carbide supply area inside the culture crucible, and gaseously supplying a dopant from a dopant supply that is arranged outside of the culture crucible to the crystal growing area and distributing the dopant inside the culture crucible, in which the dopant is introduced to a cross-section plane of the culture crucible oriented vertical to a growth direction at several adjoining lying locations in the culture crucible, where the dopant has a low-lying dopant level in a distance of 500 meV to a silicon carbide strip edge. The dopant is supplied to the crystal growing area, so that its concentration inside of the cross-section plane of the culture crucible oriented vertical to the growth direction staggers highly 5% to a concentration average value. A temperature of the dopant supply is adjusted in dependent of a temperature of the silicon carbide source material. The dopant supply is separately heated by a heater of the culture crucible, is arranged in a hollow chamber, which is provided inside a thermal insulation layer surrounding the culture crucible, and is flowed through by an inert gas. A position of the dopant supply is changed relative to the crucible. The dopant is introduced into the silicon carbide supply area or directly into the crystal growing area. An independent claim is included for a single-crystal silicon carbide substrate.