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Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation

机译:空化产生的单晶和烧结多晶碳化硅的形变和断裂

摘要

An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in the SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.
机译:进行了研究以检查暴露在空化作用下的单晶和烧结多晶SiC表面的变形和断裂行为。通过使用磁致伸缩振荡器在25°C的蒸馏水中进行气蚀实验,该振荡器紧靠SiC表面(1毫米)。喇叭频率为20 kHz,振动盘的两倍振幅为50微米。研究结果表明,SiC(0001)表面在气蚀过程中可能会发生塑性变形。当对表面进行化学蚀刻时,会形成位错蚀刻坑。缺陷的数量(包括SiC(0001)表面中的位错)随空化时间的增加而增加。烧结多晶SiC的表面层中存在诸如空隙之类的固有缺陷,确定了产生裂纹晶粒和裂纹坑(孔)的区域。单晶SiC具有比烧结多晶SiC更好的耐蚀性。

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