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首页> 外文期刊>Acta Physica Polonica >Growing Large Size Complex Oxide Single Crystals by Czochralski Technique for Electronic Devices
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Growing Large Size Complex Oxide Single Crystals by Czochralski Technique for Electronic Devices

机译:通过直拉法生长大尺寸复合氧化物单晶的电子设备

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摘要

This paper is devoted to the use and further development of the single crystal growing technique invented by Professor Jan Czochralski (1885-1953). The possibilities of the Czochralski technique are demonstrated. Further improvements were introduced at the Scientific Research Company "Carat" (Lviv, Ukraine) to grow large size complex oxide single crystals. The paper presents an overview of some single crystals grown with the use of a modified technology. Growth parameters and properties of resulting crystals are summarized to show a high potential of the Czochralski technique as an industrial technology to grow large-size, high quality, and structurally perfect single crystals of complex oxides.
机译:本文致力于Jan Czochralski教授(1885-1953)发明的单晶生长技术的使用和进一步发展。证明了切克劳斯基技术的可能性。科学研究公司“克拉”(乌克兰利沃夫)引入了进一步的改进,以生长大尺寸的复合氧化物单晶。本文概述了使用改良技术生长的一些单晶。总结了晶体的生长参数和特性,显示了Czochralski技术作为一种工业技术的巨大潜力,可用于生长大型,高质量和结构完美的复合氧化物单晶。

著录项

  • 来源
    《Acta Physica Polonica》 |2013年第2期|314-320|共7页
  • 作者单位

    Scientific Research Company 'Carat', 202, Stryjska st., Lviv, 79031, Ukraine;

    Scientific Research Company 'Carat', 202, Stryjska st., Lviv, 79031, Ukraine,Lviv Polytechnic National University, 12, Bandera st., Lviv, 79013, Ukraine;

    Scientific Research Company 'Carat', 202, Stryjska st., Lviv, 79031, Ukraine,Lviv Polytechnic National University, 12, Bandera st., Lviv, 79013, Ukraine;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    methods of crystal growth; physics of crystal growth;

    机译:晶体生长方法;晶体生长的物理学;

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