METAL GATE SEMICONDUCTOR DEVICE CAPABLE OF REDUCING THE NUMBER OF SUBSEQUENT PROCESSES

摘要

PURPOSE: A metal gate semiconductor device is provided to improve productivity by providing a plurality of gate structures which are differently formed.;CONSTITUTION: A plurality of gate structures (204) are formed. Each gate structure includes a first gate dielectric layer (218), a first metal layer, and a dummy layer (222). A part of the dummy layer is removed from a first gate structure and a second gate structure. A first trench is formed on the first gate structure. A second trench is formed on the second gate structure.;COPYRIGHT KIPO 2013