METHOD FOR IMPROVING METAL DEFECTS IN SEMICONDUCTOR DEVICE FABRICATION CAPABLE OF IMPROVING THE YIELD OF PRODUCTS

摘要

PURPOSE: A method for improving metal defects in semiconductor device fabrication is provided to increase the reliability of products by dividing a thick metal layer to form stress reduction layers between the divided layers.;CONSTITUTION: An inductor comprises transistors, dielectric layers (108), interconnects (107), and a metal layer. The transistors are located on a semiconductor substrate. The dielectric layers are located on the transistors. The interconnects are located in or on the dielectric layers. The thickness of the metal layer is 1 micron or more.;COPYRIGHT KIPO 2013