Improved Conductance Method for Determining Interface Trap Density of Metal-Oxide-Semiconductor Device with High Series Resistance

摘要

The existence of series resistance in metal-oxide-semiconductor (MOS) devices can result in both the degradation of capacitance at a high frequency and the decrease in conductance. Using a conventional conductance method that does not consider the series resistance, the interface trap density can be underestimated. We propose an improved conductance method based on an equivalent circuit model including the series resistance. Compared with the conventional method, this new method enables the accurate determination of interface trap density.