Surface diffusion-induced atomic layer deposition

摘要

The present invention relates to a method for depositing an atomic layer on the porous carrier by using a surface diffusion induced , by using a small amount of the precursor to the high aspect ratio of the porous carrier can form a uniform atomic layer to the inside of the carrier is very deep pores in a short period of time, the deposition rate per cycle is basically a phenomenon that has a discrete value by the self-limiting growth can be solved by . ;