METHOD FOR LOW POWER ACCESSING A PHASE CHANGE MEMORY DEVICE

摘要

and method is provided for accessing a phase change memory device , wherein the first sub- plurality of bit lines are grouped into a first group and a second sub - plurality of bit lines are grouped into a second group . The first and at least the bit lines in the second group of selected ; And currents are supplied to the selected bit line , the selected word line is biased . Selecting a first bit line of the first in the group, the first bit line in the second group are symmetrically arranged and the first bit line of the first in the group on the selected word line during the selection by selection of the second bit line , the bit lines are selected.