A photoelectric conversion device manufacturing method manufactures a photoelectric conversion device (10) in which a first photoelectric conversion unit (3) and a second photoelectric conversion unit (4) are sequentially stacked on a transparent-electroconductive film (2) formed on a substrate (1). The method includes: forming each of a first p-type semiconductor layer (31), a first i-type semiconductor layer (32), a first n-type semiconductor layer (33), and a second p-type semiconductor layer (41) in a plurality of first plasma CVD reaction chambers (62, 63, 64, 65); exposing the second p-type semiconductor layer (41) to an air atmosphere; supplying a gas including p-type impurities to inside a second plasma CVD reaction chamber (72) before forming of the second i-type semiconductor layer (42); forming the second i-type semiconductor layer (42) on the second p-type semiconductor layer (41) that was exposed to an air atmosphere, in the second plasma CVD reaction chamber (72); and forming the second n-type semiconductor layer (43) on the second i-type semiconductor layer (42).
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