OHMIC ELECTRODE FOR SiC SEMICONDUCTOR, METHOD FOR MANUFACTURE OF OHMIC ELECTRODE FOR SiC SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

The present invention, ohmic for including SiC semiconductor ohmic electrode 2, or Si and Ni for containing Si and Ni again, and the ohmic electrode 2 for SiC semiconductor containing Au or Pt more, and these SiC semiconductor manufacturing method of the electrode (2), a method for producing these SiC semiconductor semiconductor device and a semiconductor device using the ohmic electrode (2).