Ohmic electrode for SiC semiconductor, method of manufacturing ohmic electrode for SiC semiconductor, semiconductor device, and method of manufacturing semiconductor device

摘要

An ohmic electrode for SiC semiconductor that contains Si and Ni or an ohmic electrode for SiC semiconductor that further contains Au or Pt in addition to Si and Ni is provided. In addition, a method of manufacturing the ohmic electrode for SiC semiconductor, a semiconductor device including the ohmic electrode for SiC semiconductor, and a method of manufacturing the semiconductor device are provided.