SRAM DEVICES UTILIZING TENSILE-STRESSED STRAIN FILMS

摘要

In the present invention, the tensile-strain method of manufacturing the SRAM devices are thin and the SRAM device used are provided. The SRAM device 50 is, in one embodiment, NFET (54) and electrically connected and comprise a physically separate PFET (52). The PFET (52) includes a gate region 64, source region 60, and drain region 58. Tensile-strain is a thin film 76 is disposed on at least a part of the gate region 64 of the source region 60 and drain region 58 of the PFET (52). The method for forming the cell of the SRAM device 50 including forming the NFET (54) and PFET (52) overlying the substrate (56). The PFET (52) and NFET (54) is electrically connected and physically separated. Tensile-strain is a thin film 76 is disposed on at least a part of the gate region 64 of the source region 60 and drain region 58 of the PFET (52)