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Process for the electrolytic deposition of gallium - and gallium alloy - thin films and associated photovoltaic structures

机译:电解沉积镓及镓合金薄膜及相关光伏结构的方法。

摘要

Photovoltaic units and method for creating a p - semiconductor layer for the photovoltaic units generally contain a electroplating a layer of gallium or a gallium alloy to a conductive layer by contacting the conductive layer with a galvanization bath, which is free of complexing agents and a gallium salt, methanesulfonic acid or sodium sulfate and an organic additive, the at least one nitrogen atom and / or at least one sulfur atom, and a solvent; and a setting a ph - value of the solution to below 2,6 or via 12,6. the photovoltaic unit includes an impurity in the p - semiconductor layer, which is selected from the group consisting of arsenic, antimony, bismuth and mixtures thereof. Various photovoltaic modules - precursor layers for forming of p - conductive cis -, cgs - and - cigs semiconductor structures, by means of electroplating of the gallium or of the gallium alloys are formed in this way. In addition, processes for forming a thermal intermediate layer of gallium or a gallium alloy, with the aid of the electroplating process.
机译:光伏单元和用于创建用于光伏单元的p-半导体层的方法通常包括通过使导电层与不含络合剂和镓盐的镀锌浴接触而将镓或镓合金层电镀到导电层上。 ,甲磺酸或硫酸钠和有机添加剂,至少一个氮原子和/或至少一个硫原子以及溶剂;并将溶液的ph-值设置为2,6以下或通过12,6。光伏单元在p-半导体层中包括杂质,该杂质选自砷,锑,铋及其混合物。以这种方式形成各种光伏模块-用于形成p的前体层-通过电镀镓或镓合金形成的顺式-,顺式-cgs-和-igs型导电半导体结构。另外,借助于电镀工艺形成镓或镓合金的热中间层的工艺。

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