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A non-volatile storage device, the programming method for non-volatile storage devices and memory system, which comprises a non-volatile memory device
A non-volatile storage device, the programming method for non-volatile storage devices and memory system, which comprises a non-volatile memory device
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机译:非易失性存储设备,用于非易失性存储设备的编程方法和存储系统,其包括非易失性存储设备
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摘要
The method involves determining tendency for change of threshold voltage of first memory cell transistor from program state. A first inspection voltage of several verification voltages is selected in responsive to the determination. A check is made whether the threshold voltage of first memory cell transistor is sufficiently changed using first verification voltage. The threshold voltage of the first memory cell transistor is changed via first peripheral. An independent claim is included for non-volatile memory device.
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