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Non-volatile memory element, a non-volatile storage device, a method of manufacturing a non-volatile memory element, and a method of manufacturing a non-volatile storage device
Non-volatile memory element, a non-volatile storage device, a method of manufacturing a non-volatile memory element, and a method of manufacturing a non-volatile storage device
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机译:非易失性存储元件,非易失性存储设备,制造非易失性存储元件的方法以及制造非易失性存储设备的方法
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摘要
A nonvolatile memory element including: a first electrode; a second electrode; a variable resistance layer that is between the first electrode and the second electrode and includes, as stacked layers, a first variable resistance layer connected to the first electrode and a second variable resistance layer connected to the second electrode; and a side wall protecting layer that has oxygen barrier properties and covers a side surface of the variable resistance layer. The first variable resistance layer includes a first metal oxide and a third metal oxide formed around the first metal oxide and having an oxygen deficiency lower than that of the first metal oxide, and the second variable resistance layer includes a second metal oxide having an oxygen deficiency lower than that of the first metal oxide.
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