A method in order to achieve an increased have a semiconductor component by providing more favorable process conditions during the growing a layer with a large ε

摘要

In the manufacture of complex circuit elements, for instance of transistors, capacitors and the like, using a combination of a conventional dielectric material and a dielectric material with a large ε are an improved performance and a higher reliability is achieved by a hafnium oxide dielectric material with a large ε which is based on a conventional dielectric layer with a previous surface treatment is made, wherein at room temperature is used, for example, apm. In this way, complex transistors having improved performance and with better uniformity of the threshold value voltage properties are obtained, whereby also a premature failure on the basis of a dielectric breakdown, on account of the trapping of high-energy charge carriers and the like, is reduced.