COMPREHENSIVE MODIFICATION OF SEMICONDUCTORS AND METALS PROVIDING NEW STRUCTURAL FEATURES OF SURFACE LAYERS SUBJECTED TO COMPRESSION PLASMA FLOWS

摘要

The priority results obtained with the use of compression plasma flows for substantial structural-phase modification of semiconductor and metal surfaces are presented. In particular, the formation of bulk (cylinder-like) regular submicronanoscale structures on the silicon wafers, deposition of nanostructured metal coatings completely covering a surface including bulk structures, plasma-assisted mixing in the systems "coating-substrate" from various materials, and a deep doping of modified layer by atoms of the plasma-forming gas are reported.