Semiconductor component - production process with increased resistance capable of an etching stop, during the structuring of silicon nitride layer stacks containing by the provision of a chemically produced oxide layer during the half conductor processing

摘要

A method with:Forming a silicon oxide based etch stop layer having a thickness of approximately 1 nm or less on a silicon layer containing over a substrate of a semiconductor component is formed, by carrying out of a wet-chemical oxidation process;Forming a victims deck material by means of the etch stop layer, wherein the victims deck material comprises silicon and nitrogen;Structuring of the victims deck material, of the silicon oxide based etch stop layer and the silicon layer containing, in order to produce a component structure element;Carrying out a wet chemical cleaning process on the component structure element;Applying at least one reactive process environment on the semiconductor component with the use of the victims deck material, as a protective covering of the component structure element; andRemoval of the victims of the deck to selectively of the etch stop layer material.