INTEGRATED CIRCUIT IN SELF COMPRISING ADJACENT CELLS OF DIFFERENT TYPES

摘要

The invention relates to an integrated circuit (2) comprising a semiconductor substrate (201), and comprising: a first cell (2H) comprising transistors of the FDSOI type and each having: a buried insulating layer (203) of the type UTBOX, a ground plane and a box; a second cell (2L) adjacent to the first cell and comprising transistors of FDSOI type and each having: a buried insulating layer (203) of the UTBOX type, a ground plane and a box. The integrated circuit comprises a bias circuit configured to apply separate voltages to doped boxes P. One of the P-doped wells (212pL) of a transistor of the second cell (2L) is separated from the first cell (2H) and the semiconductor substrate (201) through an N-doped separation well (21 3L, 222L).