MEMORY DEVICE CORRECTING COLLISION EFFECT OF HIGH ENERGY PARTICLES.

摘要

Memory device for correcting the effect of high-energy particle collisions, comprising at least one memory cell (CM), comprising: - retention means (MRET), during a predetermined period, of the stored value (Qd) in said memory cell (CM); detection means (MDET) of a change of state of said memory cell (CM), by comparison of the value stored in said retention means (MRET); and - management means (MG) adapted to determine whether a change of state of said detected memory cell (CM) is due to a high energy particle and, in this case, to command a reloading of the value stored in said memory means; retention (MRET) in said memory cell (CM).