Memory device that corrects the effect of high energy particle collisions

摘要

Memory device that automatically corrects the effect of high energy particle collisions, comprising a memory cell (CM); - means (MRET) for retaining, during a certain delay, an exemplary threshold of a value (Qd) stored in said memory cell (CM), characterized in that the memory device further comprises: - means (MDET) for detecting a change of state of said memory cell (CM), by comparing the value (Qd) memorized in said memory cell (CM) with the value in retention in said retention means (MRET); and - a management means (MG) comprising a multiplexing means adapted to determine if a change of state of said detected memory cell (CM) is due to a high energy particle collision or is a controlled state change, the multiplexing means receive at the input an output of the detection module (MDET), a signal (Q) that represents the value placed on hold in the hold module (MRET) during the determined delay, a state (Data) of the data to be memorized in the memory cell (MC), as well as a validation signal (CS) for loading the data accompanying said state (Data) confirming a controlled state change of the value to be memorized in said memory cell and adapted to, in the event that the detected memory cell state change is due to a collision of high-energy particles, automatically control a reload of the value stored in said retention means (MRET) in said memory cell (CM), thereby making it possible to avoid the intervention of a data refresh rate clock that may disturb RF radio frequency type functions.