Use of dihydrotetraazapentacenes as n-dopant in nano components of field effect transistors

摘要

A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene (Fig., each of R1, R2, R3, and R4 can be hydrogen, an alkyl group of C1 to C16 carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group or a carboxylic ester group) to produce a stable n-doped nano-component. Dihydrotetraazapentacene may be applied in solution with DMSO, DMF or NMP as solvent. The nano-component is preferably a carbon nanotube, a semi-conductor nanotube, semiconductor nanocrystal, a semiconductor nanowire or it comprises elements of groups III, IV, V and VI.