SOL-GEL SOLUTION FOR FERROELECTRIC THIN FILM FORMATION

摘要

PROBLEM TO BE SOLVED: To provide a sol-gel solution for ferroelectric thin film formation which allows one layer having a larger thickness to be applied at one application according to a sol-gel method in forming a PZT ferroelectric thin film, and which allows the resultant PZT film after preliminary and regular baking steps to have a dense film structure with no crack.SOLUTION: A sol-gel solution for ferroelectric thin film formation comprises: a PZT-based compound; a polymer compound for viscosity control including polyvinyl pyrrolidone; and an organic dopant including N-methyl pyrrolidone. The sol-gel solution includes: 17 mass% or more of the PZT-based compound in terms of oxides. The molar ratio of the polyvinyl pyrrolidone to the PZT-based compound is represented as follows in terms of monomers: PZT-based compound:Polyvinyl pyrrolidone=1:0.1-0.5. Since the N-methyl pyrrolidone is included by 3-13 mass% of the sol-gel solution, the thickness of a layer which can be formed at one application can be made thicker, and thus the production efficiency can be increased; and a dense film with no crack can be formed even after preliminary and regular baking steps.