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The step which compares threshold voltage of the memory data detection device null memory cell which controls
The step which compares threshold voltage of the memory data detection device null memory cell which controls
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机译:比较控制的存储数据检测装置空存储单元的阈值电压的步骤
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摘要
Example embodiments may relate to a method and an apparatus for reading data stored in a memory, for example, providing a method and an apparatus for controlling a reference voltage based on an error of the stored data. Example embodiments may provide a memory data detecting apparatus including a first voltage comparator to compare a threshold voltage of a memory cell with a first reference voltage, a first data determiner to determine a value of at least one data bit stored in the memory cell according to a result of the comparison, an error verifier to verify whether an error occurs in the determined value, a reference voltage determiner to determine a second reference voltage that is lower than the first reference voltage based on a result of the verification, and a second data determiner to re-determine the value of the data based on the determined second reference voltage.
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