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The step which compares threshold voltage of the memory data detection device null memory cell which controls

机译:比较控制的存储数据检测装置空存储单元的阈值电压的步骤

摘要

Example embodiments may relate to a method and an apparatus for reading data stored in a memory, for example, providing a method and an apparatus for controlling a reference voltage based on an error of the stored data. Example embodiments may provide a memory data detecting apparatus including a first voltage comparator to compare a threshold voltage of a memory cell with a first reference voltage, a first data determiner to determine a value of at least one data bit stored in the memory cell according to a result of the comparison, an error verifier to verify whether an error occurs in the determined value, a reference voltage determiner to determine a second reference voltage that is lower than the first reference voltage based on a result of the verification, and a second data determiner to re-determine the value of the data based on the determined second reference voltage.
机译:示例实施例可以涉及一种用于读取存储在存储器中的数据的方法和设备,例如,提供一种用于基于所存储的数据的误差来控制参考电压的方法和设备。示例实施例可以提供一种存储器数据检测设备,该存储器数据检测设备包括:第一电压比较器,用于将存储单元的阈值电压与第一参考电压进行比较;第一数据确定器,用于根据存储在存储单元中的至少一个数据位的值来确定。比较的结果,用于验证确定值中是否发生错误的错误验证器,用于基于验证结果来确定低于第一参考电压的第二参考电压的参考电压确定器以及第二数据确定器基于所确定的第二参考电压来重新确定数据的值。

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