Method for manufacturing thin-film resistor, thin-film resistor and semiconductor device

摘要

PROBLEM TO BE SOLVED: To allow stable laser trimming without adding a new mask and process step, influencing manufacturing dispersion nor influencing a characteristic of a thin-film resistive element.;SOLUTION: The thin-film resistive element formed on a silicon substrate 1 and subjected to laser trimming includes, in a laminated structure, a first thin-film resistive element 10 formed at a film thickness of 3-50 nm, a silicon oxide film 9 formed at a thickness of 10-30 nm on an upper layer of the first thin-film resistive element 10, and a second thin-film resistive element 10 formed on an upper layer of the silicon oxide film 9 at a film thickness not smaller than 50 nm.;COPYRIGHT: (C)2009,JPO&INPIT